THN6702F Datasheet, PDF (1/4 Pages) AUK corp – SiGe NPN Transistor

Semiconductor
□ Applications
- VHF and UHF wide band amplifier
□ Features
- Medium power application (2W)
- Power gain
G_P = 15 dB at V_CE = 6.0 V, f = 460 MHz, P_IN = 0 dBm
Output power
P_OUT = 33.5 dBm at V_CE = 6.0 V, I_CQ = 30 mA, f = 460 MHz
THN6702F
SiGe NPN Transistor
SOT-89
Unit in mm
3
4
2
1
Pin Configuration
1. Base
2. Emitter
3. Collector
4. Emitter
□ Absolute Maximum Ratings (T_A = 25 ℃)
Param eter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Sym bol
BV_CBO
BV_CEO
BV_EBO
I_C
P_tot
T_j
T_stg
Ratings
15
10
1.5
900
2
150
-65 ~ 150
Unit
V
V
V
mA
W
℃
℃
1