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THN6702F Datasheet, PDF (2/4 Pages) AUK corp – SiGe NPN Transistor | |||
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â¡ Thermal Characteristics
Symbol
Rth j-a
Parameter
Thermal Resistance from Junction to Ambient
THN6702F
Value
Unit
65
K/W
â¡ Electrical Characteristics (TA = 25 â)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Power Gain
Output Power
Collector Efficiency
ICBO
ICEO
IEBO
hFE
GP
POUT
ηC
VCB = 10 V, IE = 0 mA
VCE = 7 V, IB = 0 mA
VEB = 1.0 V, IC = 0 mA
VCE = 3 V, IC = 100 mA
VCE = 6.0 V, IC = 30 mA (RF off),
f = 460 MHz, PIN=0dBm
VCE = 6.0 V, IC = 30 mA (RF off),
f = 460 MHz, PIN=20dBm
VCE = 6.0 V, IC = 30 mA (RF off),
f = 460 MHz, PIN=20dBm
Min. Typ. Max. Unit
-
-
2.5
ã
-
-
1.5
ã
-
-
1.5
ã
60
180
13
15
-
dB
32 33.5
-
dBm
55
-
%
â¡ hFE Classification
Marking
hFE Value
PD1
60 -180
2
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