THN450Z Datasheet, PDF (4/5 Pages) AUK corp – SiGe NPN Transistor

THN450Z
Collector Current
vs. Collector to Emitter Voltage
90
80
70
I^IBB ⁼= ⁸8⁰00^{0 u}㎂^A
60
IIB == 660000 u㎂A
B
50
40
IIB_B = 44000 u㎂A
30
IIB == 220000 u㎂A
20
B
10
0
0
1
2
3
4
Collector to Emitter Voltage, V (V)
CE
Maximum Available Gain
vs. Collector Current
30
25
V =3V
CE
f = 0.9 GHz
20
V =2V
CE
V =3V
CE
15
f = 1.8 GHz
V =2V
CE
10
5
0
1
10
100
Collector Current, I (mA)
C
Gain Bandwidth Product
vs. Collector Current
24
22
20
V =3V
CE
18
16
14
12
V =2V
CE
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110
Collector Current, I (mA)
C
Insertion Power Gain
vs. Collector Current
25
20
f = 0.9 GHz
V =3V
CE
V =2V
CE
15
V =3V
CE
10
V =2V
CE
f = 1.8 GHz
5
0
1
10
100
Collector Current, I (mA)
C
4