THN450Z Datasheet, PDF (2/5 Pages) AUK corp – SiGe NPN Transistor

□ Electrical Characteristics ( T_A = 25 ℃ )
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Maximum Available Gain
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I_CBO
I_CEO
I_EBO
h_FE
f_T
MAG
|S₂₁|²
NF
C_re
Test Conditions
V_CB = 7 V, I_E = 0 mA
V_CE = 2 V, I_B = 0 mA
V_EB = 1 V, I_C = 0 mA
V_CE = 3 V, I_C = 5 mA
V_CE = 2 V, I_C = 50 mA
V_CE = 3 V, I_C = 70 mA
V_CE = 2 V, I_C = 50 mA, f = 0.9 GHz
V_CE = 2 V, I_C = 50 mA, f = 1.8 GHz
V_CE = 2 V, I_C = 50 mA, f = 0.9 GHz
V_CE = 2 V, I_C = 50 mA, f = 1.8 GHz
V_CE = 2 V, I_C = 7 mA, f = 1.8 GHz
V_CB = 2 V, I_E = 0 mA, f = 1 MHz
THN450Z
Min. Typ. Max.
-
-
1.0
-
-
1.0
-
-
0.5
50
-
260
14
16
-
16
18
-
20
22
-
12
14
-
16
18
-
10
12
-
-
1.5 2.0
- 0.35
-
Unit
㎂
㎂
㎂
GHz
GHz
dB
dB
dB
dB
dB
pF
□ h_FE Classification
Marking
h_FE Value
BG1
50 - 150
BG2
130 - 260
2