THN450Z Datasheet, PDF (1/5 Pages) AUK corp – SiGe NPN Transistor

Semiconductor
THN450Z
SiGe NPN Transistor
□ Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
SOT-343
Unit in mm
□ Features
- High gain bandwidth product
f_T = 16 GHz @ V_CE = 2 V, I_C = 50 mA
f_T = 18 GHz @ V_CE = 3 V, I_C = 70 mA
- High power gain
|S₂₁|² = 12 dB @ V_CE = 2 V, I_C = 50 mA, f = 1.8 GHz
MAG = 14 dB @ V_CE = 2 V, I_C = 50 mA, f = 1.8 GHz
- Low noise figure
NF = 1.5 dB @ V_CE = 2 V, I_C = 7 mA, f = 1.8 GHz
□ Absolute Maximum Ratings ( T_A = 25 ℃ )
Param eter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Sym bol
BV_CBO
BV_CEO
BV_EBO
I_C
P_tot
T_j
T_stg
Caution : Electro Static Discharge sensitive device
1
3
2
4
Pin Configuration
1. Base
2. Emitter
3. Emitter
4. Collector
Ratings
Unit
10
V
4.5
V
1.5
V
100
mA
450
mW
150
℃
-65 ~ 150
℃
1