THN405Z Datasheet, PDF (4/5 Pages) AUK corp – SiGe NPN Transistor

THN405Z
Collector Current
vs. Collector to Emitter Voltage
20
18
16
14
I_IB =₌ 1₁2₂0₀ ㎂_uA
B
12
10
IB_B = 90 u㎂A
8
II_BB == 6600 u㎂A
6
4
IIB = 30 u㎂A
B
2
0
0
1
2
3
4
Collector to Emitter Voltage, V (V)
CE
Gain Bandwidth Product
vs. Collector Current
30
25
20
V =3V
CE
15
10
V =2V
CE
5
0
0
5 10 15 20 25 30
Collector Current, I (mA)
C
Maximum Available Gain
vs. Collector Current
35
30
f = 1 GHz
25
V =3V
CE
V =2V
20
CE
V =3V
CE
15
f = 1.8 GHz
V =2V
CE
10
5
0
1
10
100
Collector Current, I (mA)
C
Insertion Power Gain
vs. Collector Current
30
25
f = 1 GHz
V =3V
CE
20
V =2V
CE
15
V =3V
CE
f
=
1.8
GHz
V
CE
=
2
V
10
5
0
1
10
100
Collector Current, I (mA)
C
4