THN405Z Datasheet, PDF (2/5 Pages) AUK corp – SiGe NPN Transistor

□ Electrical Characteristics ( T_A = 25 ℃ )
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Maximum Available Gain
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I_CBO
I_CEO
I_EBO
h_FE
f_T
MAG
|S₂₁|²
NF
C_re
Test Conditions
V_CB = 9 V, I_E = 0 mA
V_CE = 3 V, I_B = 0 mA
V_EB = 1 V, I_C = 0 mA
V_CE = 3 V, I_C = 5 mA
V_CE = 2 V, I_C = 10 mA
V_CE = 3 V, I_C = 15 mA
V_CE = 2 V, I_C = 5 mA, f = 1.0 GHz
V_CE = 2 V, I_C = 5 mA, f = 1.8 GHz
V_CE = 2 V, I_C = 5 mA, f = 1.0 GHz
V_CE = 2 V, I_C = 5 mA, f = 1.8 GHz
V_CE = 2 V, I_C = 2 mA, f = 1.8 GHz
V_CB = 2 V, I_E = 0 mA, f = 1 MHz
THN405Z
Min. Typ. Max.
-
-
1.0
-
-
1.0
-
-
0.5
50
-
260
15
17
-
16
19
-
21
23
-
18
20
-
16
18
-
13
15
-
-
1.4 2.0
- 0.07
-
Unit
㎂
㎂
㎂
GHz
GHz
dB
dB
dB
dB
dB
pF
□ h_FE Classification
Marking
h_FE Value
BF1
50 - 150
BF2
130 - 260
2