THN405Z Datasheet, PDF (3/5 Pages) AUK corp – SiGe NPN Transistor

THN405Z
□ Typical Characteristics ( T_A = 25 ℃, unless otherwise specified )
Power Dissipation
vs. Ambient Temperature
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient Temperature, T (oC)
A
Collector to Base Capacitance
vs. Collector to Base Voltage
0.30
f = 1 MHz
0.25
0.20
0.15
0.10
0.05
0.00
0
1
2
3
4
5
Collector to Base Voltage, V (V)
CB
DC Current Gain
vs. Collector Current
400
V =3V
CE
100
50
10
0.1
1
10
30
Collector Current, I (mA)
C
Collector Current
vs. Base to Emitter Voltage
20
V =3V
CE
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, V (V)
BE
3