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U6083B Datasheet, PDF (8/12 Pages) TEMIC Semiconductors – PWM Power Control with Interference Suppression
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Electrical Characteristics
Tamb = -40°C to +110°C, VBatt = 9 to 16.5 V, (basic function is guaranteed between 6.0 V to 9.0 V) reference point ground,
unless otherwise specified (see Figure 1 on page 2). All other values refer to pin GND (pin 2).
Parameters
Test Conditions
Pin
Symbol Min. Typ. Max. Unit
Current consumption
1
Supply voltage
Overvoltage detection, stage 1
Stabilized voltage
IS = 10 mA
1
Battery undervoltage detection
on
off
IS
VBatt
Vs
VBatt
7.9
mA
25
V
24.5
27.0
V
4.4
5.0
5.6
4.8
5.4
6.0
V
Battery Overvoltage Detection
Stage 1:
on
off
VBatt
18.3 20.0 21.7
16.7 18.5 20.3
V
V
Stage 2:
on
Detection stage 2
off
VBatt
25.5 28.5 32.5
19.5 23.0 26.5
V
V
Stabilized voltage
Short-circuit Protection
IS = 30 mA
1
Vs
18.5 20.0 21.5
V
6
Short-circuit current limitation
VT1 = VS - V6
Short-circuit detection
VT2 = VS - V6
VT2 = VS - V6
Delay Timer Short-ciruit Detection, VBatt = 12 V
Switched off threshold
VT5 = VS - V5
Charge current
Discharge current
Capacitance current
Voltage Doubler
I5 = Ich - Idis
VT1
85
100
120
mV
VT2
75
90
105
mV
VT1 - VT2
3
10
30
mV
5
VT5
10.2 10.4 10.6
V
Ich
13
µA
Idis
3
µA
I5
5
10
15
mA
7
Voltage
Oscillator frequency
Duty cycle 100%
Internal voltage limitation
I7 = 5 mA (whichever is lower)
Edge steepness
dv8/dt = a4 dV4/dt
dV8/dtmax
Gate Output
8
V7
2 VS
f7
280
400
520
kHz
V7
26
27.5 30.0
V
V7
VS+14
VS+15
VS+16
V
a4
53
63
72
130
V/ms
Low level
Voltage
VBatt = 16.5 V Tamb = 110°C,
R3 = 150 W
High level, duty cycle 100%
Current
V8 = Low level
V8 = High level, I7 > ½ I8 ½
Duty cycle
Min: C2 = 68 nF
Max: VBatt £ 12.4 V
VBatt = 16.5 V, C2 = 68 nF
Note: 1. Reference point is battery ground
V8
0.35 0.70 0.95
V
V8
1.5(1)
V
V8
V7
V
I8
1.0
mA
I8
-1.0
mA
15
18
21
tp/T
100
%
65
73
81
8 U6083B
4770A–AUTO–11/03
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