AT25DF641 Datasheet, PDF (1/59 Pages) ATMEL Corporation – 64-Megabit 2.7-volt Minimum SPI Serial Flash Memory

Features
• Single 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
– Supports RapidS^® Operation
– Supports Dual-Input Program and Dual-Output Read
• Very High Operating Frequencies
– 100 MHz for RapidS
– 85 MHz for SPI
– Clock-to-Output (t_V) of 5 ns Maximum
• Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
• Individual Sector Protection with Global Protect/Unprotect Feature
– 128 Sectors of 64-Kbytes Each
• Hardware Controlled Locking of Protected Sectors via WP Pin
• Sector Lockdown
– Make Any Combination of 64-Kbyte Sectors Permanently Read-Only
• 128-Byte Programmable OTP Security Register
• Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
• Fast Program and Erase Times
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 400 ms Typical 64-Kbyte Block Erase Time
• Program and Erase Suspend/Resume
• Automatic Checking and Reporting of Erase/Program Failures
• Software Controlled Reset
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
– 5 mA Active Read Current (Typical at 20 MHz)
– 5 µA Deep Power-Down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 16-Lead SOIC (300-mil wide)
– 8-Contact Very Thin DFN (6 x 8 mm)
64-Megabit
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25DF641
Preliminary
See applicable errata
in Section 18.
1. Description
The AT25DF641 is a serial interface Flash memory device designed for use in a wide
variety of high-volume consumer based applications in which program code is shad-
owed from Flash memory into embedded or external RAM for execution. The flexible
erase architecture of the AT25DF641, with its erase granularity as small as 4-Kbytes,
makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.
3680E–DFLASH–12/08