AO3420 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V_DS=10V
I_D=6A
V_DS=15V
I_D=3.8A
3
1400
1200
1000
C_iss
800
2
600
1
400
C_oss
C_{osCs rss}
200
C_rss
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
V_DS(Volts)
Figure 8: Capacitance Characteristics
100
T_J(Max)=150°C, T_A=25°C
R_DS(ON)
10 _limited
20
15
10µs
100µs
10
270
T_J(Max)=150°C
T_A=25₁°_.C₇
3.6
1
1ms
DC
10ms
100m
1s
0.1
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
5
0
13
0.001 0.01
0.1
1
10
Pulse Width (s)
100 1000
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
In descending order
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJA=90°C/W
1
P_D
0.1
Single Pulse
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.