AO3420 Datasheet, PDF (3/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
3V
4V
20
V_GS =2V
20
V_GS=5V
15
V_DS=5V
10
10
V_GS =1.5V
0
0
1
2
3
4
5
V_DS(Volts)
Figure 1: On-Regions Characteristics
125°C
5
125°C
25°C
25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS(Volts)
Figure 2: Transfer Characteristics
50
V_GS=1.8V
40
V_GS=2.5V
30
V_GS=4.5V
20
V_GS=10V
10
0
2
4
6
8
10
I_D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
270
1.6
IV_DG=I^SD4==A23..55VA
1.7
1.4
V_GS=4.5V
I_D=5A
3^V.G6S^=I_D^1=03V.8A
I_D=6A
1.2
V_GS=1.8V
I_D=2A
I_D=1A
1.0
0.8
0
13
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
80
I_D=3.8A _ID=6A
70
60
125°C
50
40
125°C _25°C
30
20
25°C
10
0
2
4
6
8
V_GS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E+01
1E+00
1E-01
125°C
1E-02
1E-03
1E-04
25°C
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
V_SD(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.