AO3420 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3420
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is
suitable for use as a uni-directional or bi-directional
load switch. Standard Product AO3420 is Pb-free
(meets ROHS & Sony 259 specifications). AO3420L
is a Green Product ordering option. AO3420 and
AO3420L are electrically identical.
Features
V_DS (V) = 20V
I_D = 6 A (V_GS = 10V)
R_DS(ON) < 24mΩ (V_GS = 10V)
R_DS(ON) < 27mΩ (V_GS = 4.5V)
R_DS(ON) < 42mΩ (V_GS = 2.5V)
R_DS(ON) < 55mΩ (V_GS = 1.8V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
6
5
25
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
100
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.