AO3435 Datasheet, PDF (3/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-4.5V
20
15
10
-3.0V
-2.5V
-2.0V
20
V_DS=-5V
15
10
5
V_GS=-1.5V
0
0
1
2
3
4
5
-V_DS (Volts)
Figure 1: On-Region Characteristics
5
125°C
25°C
0
0
0.5
1
1.5
2
2.5
3
-V_GS(Volts)
Figure 2: Transfer Characteristics
150
130
V_GS=-1.5V
110
V_GS=-1.8V
90
V_GS=-2.5V
70
V_GS=-4.5V
50
0
2
4
6
8
10
-I_D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.6
V_GS=-
1.4
2.5V
V_GS=-4.5V
1.2
I_D=-3.5A
V_GS=-1.5V
I_D=-0.5A
1
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
180
I_D=-3.5A
160
140
120
100
125°C
80
60
25°C
40
0
2
4
6
8
-V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E+02
1E+01
12
1E+00
1E-01
125°C
1E-02
25°C
1E-03
1E-04
1E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V_SD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.