AO3435 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3435
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=-250µA, V_GS=0V
-20
V
I_DSS
Zero Gate Voltage Drain Current
V_DS=-20V, V_GS=0V
T_J=55°C
-1
µA
-5
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±8V
±100 nA
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=-250µA
-0.5 -0.65 -1
V
I_D(ON)
On state drain current
V_GS=-4.5V, V_DS=-5V
-25
A
V_GS=-4.5V, I_D=-3.5A
T_J=125°C
56
70
mΩ
80 100
R_DS(ON) Static Drain-Source On-Resistance
V_GS=-2.5V, I_D=-3.0A
V_GS=-1.8V, I_D=-2.0A
V_GS=-1.5V, I_D=-0.5A
70
90 ^mΩ
85 110 ^mΩ
100 130 ^mΩ
g_FS
Forward Transconductance
V_DS=-5V, I_D=-3.5A
15
S
V_SD
Diode Forward Voltage
I_S=-1A,V_GS=0V
-0.7 -1
V
I_S
Maximum Body-Diode Continuous Current
-1.4
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=-10V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
560 745 pF
80
pF
70
pF
15
23
Ω
SWITCHING PARAMETERS
Q_g
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V_GS=-4.5V, V_DS=-10V, I_D=-3.5A
V_GS=-4.5V, V_DS=-10V, R_L=3Ω,
R_GEN=6Ω
I_F=-3.5A, dI/dt=100A/µs
I_F=-3.5A, dI/dt=100A/µs
8.5
11
nC
1.2
nC
2.1
nC
7.2
ns
36
ns
53
ns
56
ns
37
49
ns
27
nC
A: The value of R _θJA is measured with the device mounted on 1 in ² FR-4 board with 2oz. copper, in a still air environment with T_A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in ² FR-4 board with 2oz. Copper, in a still a₁ir₂environment with T_A=25°C. The SOA
curve provides a single pulse rating.
Rev0 : April 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.