AO3435 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3435
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3435/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.5V. This
device is suitable for use in buck convertor
applications.
AO3435 and AO3435L are electrically identical.
-RoHS Compliant
-AO3435L is Halogen Free
Features
V_DS = -20V
I_D = -3.5A
R_DS(ON) < 70mΩ
R_DS(ON) < 90mΩ
R_DS(ON) < 110mΩ
R_DS(ON) < 130mΩ
(V_GS = -4.5V)
(V_GS =- 4.5V)
(V_GS = -2.5V)
(V_GS = -1.8V)
(V_GS = -1.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
-20
Gate-Source Voltage
V_GS
±8
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
-3.5
-2.9
I_D
-2.7
-2.3
I_DM
-25
T_A=25°C
Power Dissipation ^A T_A=70°C
1.4
1
P_D
0.9
0.6
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^A Steady-State
R_θJA
70
100
90
125
Maximum Junction-to-Lead ^C Steady-State
R_θJL
63
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.