AAT8401 Datasheet, PDF (4/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET

Typical Characteristics
Gate Charge
5 _{VD = 15V}
I_D = 2.7A
4
3
2
1
0
0
1
2
3
4
5
Q_G, Charge (nC)
AAT8401
20V P-Channel Power MOSFET
Source-Drain Diode Forward Voltage
10
T_J = 150°C
1
T_J = 25°C
0.1
0
0.2
0.4
0.6
0.8
V_SD (V)
1
1.2
Capacitance
750
600
C_iss
450
300
150
C_rss
C_oss
0
0
-5
-10
-15
-20
V_DS (V)
Single Pulse Power, Junction to Ambient
30
25
20
15
10
5
0
0.001
0.01
0.1
1
10
Time (s)
100
1000
Transient Thermal Response, Junction to Ambient
10
1
0.1 0.2 0.5
0.1
0.01
0.0001
.05 .02
Single Pulse
0.001
0.01
0.1
1
Time (s)
10
100
1000
4
8401.2003.06.0.61