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AAT8401 Datasheet, PDF (1/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET
General Description
The AAT8401 is a low threshold MOSFET designed
for the battery, cell phone, and PDA markets. Using
AnalogicTech™’s ultra high density proprietary
TrenchDMOS™ technology, this product demon-
strates high power handling and small size.
AAT8401
20V P-Channel Power MOSFET
Features
• VDS(MAX) = -20V
• ID(MAX) 1 = -2.4A @ 25°C
• Low RDS(ON):
• 100 mΩ @ VGS = -4.5V
• 175 mΩ @ VGS = -2.5V
Applications
• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
SC59 Package
Top View
D
3
1
G
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C 1
Pulsed Drain Current 2
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
Operating Junction and Storage Temperature Range
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
2
S
Value
-20
±12
±2.4
±2.0
±9
-0.9
1.0
0.6
-55 to 150
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
Description
Typical Junction-to-Ambient steady state 1
Maximum Junction-to-Ambient t<5 seconds 1
Typical Junction-to-Foot 1
Value
145
125
50
Units
V
A
W
°C
Units
°C/W
°C/W
°C/W
8401.2003.06.0.61
1