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AAT8401 Datasheet, PDF (2/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET
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AAT8401
20V P-Channel Power MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Description
Conditions
Min Typ Max Units
DC Characteristics
BVDSS Drain-Source Breakdown Voltage
RDS(ON) Drain-Source ON-Resistance 2
ID(ON)
VGS(th)
IGSS
On-State Drain Current 2
Gate Threshold Voltage
Gate-Body Leakage Current
IDSS
Drain Source Leakage Current
gfs
Forward Transconductance 2
Dynamic Characteristics 3
VGS=0V, ID=-250µA
VGS=-4.5V, ID=-2.4A
VGS=-2.5V, ID=-1.8A
VGS=-4.5V, VDS=-5V (Pulsed)
VGS=VDS, ID=-250µA
VGS=±12V, VDS=0V
VGS=0V, VDS=-20V
VGS=0V, VDS=-16V, TJ=70°C 3
VDS=-5V, ID=-2.4A
-20
V
88 100
146 175
mΩ
-9
A
-0.6
V
±100 nA
-1
-5
µA
4
S
QG
Total Gate Charge
VDS=-15V, RD=5.6Ω, VGS=-4.5V
4
QGS
Gate-Source Charge
VDS=-15V, RD=5.6Ω, VGS=-4.5V
0.6
nC
QGD
Gate-Drain Charge
VDS=-15V, RD=5.6Ω, VGS=-4.5V
1.4
tD(ON)
Turn-ON Delay
VDS=-15V, RD=5.6Ω, VGS=-4.5V, RG=6Ω
6.5
tR
tD(OFF)
Turn-ON Rise Time
Turn-OFF Delay
VDS=-15V, RD=5.6Ω, VGS=-4.5V, RG=6Ω
13
ns
VDS=-15V, RD=5.6Ω, VGS=-4.5V, RG=6Ω
15
tF
Turn-OFF Fall Time
VDS=-15V, RD=5.6Ω, VGS=-4.5V, RG=6Ω
20
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage 2 VGS=0, IS=-2.4A
IS
Continuous Diode Current 1
-1.3
V
-0.9
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, howev-
er RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
2
8401.2003.06.0.61
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