AAT8307 Datasheet, PDF (4/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET

Typical Characteristics
(T_J = 25ºC unless otherwise noted)
Gate Charge
5 _VD=15V
4 ^ID=6.5A
3
2
1
0
0
3
6
9
12
15
Q_G, Charge (nC)
AAT8307
20V P-Channel Power MOSFET
Source-Drain Diode Forward Voltage
100
10
T_J = 150°C
T_J = 25°C
1
0.1
0
0.2
0.4
0.6
0.8
V_SD (V)
1
1.2
Capacitance
2000
1600
1200
C_iss
800
400
0
0
C_rss
C_oss
5
10
15
20
V_DS (V)
Single Pulse Power, Junction to Ambient
60
50
40
30
20
10
0
0.001
0.1
10
Time (s)
1000
Transient Thermal Response, Junction to Ambient
10
1
.5
.2
0.1 .1
.02
.01
0.01
0.0001
0.001
Single Pulse
0.01
0.1
1
Time (s)
10
100
1000
4
8307.2003.06.0.62