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AAT8307 Datasheet, PDF (2/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET
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AAT8307
20V P-Channel Power MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Description
Conditions
Min Typ Max Units
DC Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA
RDS(ON) Drain-Source ON-Resistance 2
VGS=-4.5V, ID=-6.0A
VGS=-2.5V, ID=-4.6A
ID(ON) On-State Drain Current 2
VGS=-4.5V, VDS=-5V (Pulsed)
VGS(th) Gate Threshold Voltage
VGS=VDS, ID=-250µA
IGSS Gate-Body Leakage Current
VGS=±12V, VDS=0V
IDSS
Drain Source Leakage Current
VGS=0V, VDS=-20V
VGS=0V, VDS=-16V, TJ=70°C 3
gfs
Forward Transconductance 2
VDS=-5V, ID=-6.0A
Dynamic Characteristics 3
-20
V
27 35
46 60
mΩ
-32
A
-0.6
V
±100 nA
-1
-5
µA
12
S
QG
Total Gate Charge
VDS=-15V, RD=2.5Ω, VGS=-4.5V
14
QGS Gate-Source Charge
VDS=-15V, RD=2.5Ω, VGS=-4.5V
2.3
nC
QGD Gate-Drain Charge
VDS=-15V, RD=2.5Ω, VGS=-4.5V
5.5
tD(ON) Turn-ON Delay
VDD=-15V, VGS=-4.5V, RD=2.5Ω, RG=6Ω
10
tR
tD(OFF)
Turn-ON Rise Time
Turn-OFF Delay
VDD=-15V, VGS=-4.5V, RD=2.5Ω, RG=6Ω
37
ns
VDD=-15V, VGS=-4.5V, RD=2.5Ω, RG=6Ω
36
tF
Turn-OFF Fall Time
VDD=-15V, VGS=-4.5V, RD=2.5Ω, RG=6Ω
52
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage 2 VGS=0, IS=-6.0A
IS
Continuous Diode Current 1
-1.2
V
-1.9
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, howev-
er RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
2
8307.2003.06.0.62
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