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| AAT8307 Datasheet, PDF (1/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET | |||
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General Description
The AAT8307 is a low threshold P Channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTechâ¢'s proprietary ultra-
high density Trench technology, and space saving
small outline J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the area of a TSOP6 package.
Applications
⢠Battery Packs
⢠Cellular & Cordless Telephones
⢠Battery-powered portable equipment
⢠Load Switches
AAT8307
20V P-Channel Power MOSFET
Features
⢠VDS(MAX) = -20V
⢠ID(MAX) 1 = -6.0A @ 25°C
⢠Low RDS(ON):
⢠35 m⦠@ VGS = -4.5V
⢠60 m⦠@ VGS = -2.5V
TSOPJW-8 Package
Top View
DDDD
8765
1234
SSSG
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C 1
Pulsed Drain Current 2
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
Operating Junction and Storage Temperature Range
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Value
-20
±12
±6.0
±4.8
±32
-1.9
2.1
1.3
-55 to 150
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
Description
Junction-to-Ambient steady state 1
Junction-to-Ambient t<5 seconds 1
Junction-to-Foot 1
Typ
Max
90
110
48
59
31
37
Units
V
A
W
°C
Units
°C/W
°C/W
°C/W
8307.2003.06.0.62
1
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