AHK6030LX Datasheet, PDF (3/4 Pages) Advanced Analogic Technologies – 30V N-Channel Power MOSFET

Typical Characteristics
Output Characteristics
60.00
10V
45.00
6V
5V
30.00
15.00
0.00
0.00
1.00
2.00
3.00
VDS (V)
4.5V
4V
3.5V
3V
4.00
5.00
Normalized On-Resistance vs.
Drain Current
3
V_GS=3.5V
2.5
V_GS=4.0V
2
V_GS=4.5V
1.5
1
0.5
0
0.00
V_GS=5V
V_GS=6V
V_GS=10V
10.00
20.00
I_D (A)
30.00
40.00
Gate Charge
10
VD=15V
8
RD=1.2Ω
6
4
2
0
0
10
20
30
40
50
Qg, Charge (nC)
AHK6030LX
30V N-Channel Power MOSFET
Transfer Characteristics
60
VD=VG
50
40
30
20
10
0
0
1
2
3
4
5
VGS (V)
On-Resistance vs. Gate to
Source Voltage
40
10A
20A
30
30A
20
10
0
0
2
4
6
8
10
VGS (V)
Source-Drain Diode Forward Voltage
100
10
1
0.1
0.4
0.6
0.8
1
1.2
VSD (V)
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
[phone] Fax [phone]
6030LX.2001.05.0.91