AHK6030LX Datasheet, PDF (1/4 Pages) Advanced Analogic Technologies – 30V N-Channel Power MOSFET

General Description
Utilizing Analogic Tech’s state-of-the-art
TrenchDMOS^â process, the AHK6030LX sets a
new standard in current handling capability and
efficiency for surface mount power MOSFETs.
Gate charge and R_DS(ON) have been optimized and
package inductance minimized to provide high
efficiency for DC-DC.
Applications
•= DC-DC converters for CPU’s
•= High Current Load Switch
AHK6030LX
30V N-Channel Power MOSFET
Features
PWMSwitch^TM
•= V_DS(MAX) = 30V
•= I_D(MAX)(a) = 52 A @ 25°C
•= I_APP(MAX) = 20A in typical computer application
•= Low Gate Charge
•= Low R_DS(ON):
10.5 mΩ=(max), 9.5 mΩ=(typ)@V_GS = 10V
18 mΩ= (max), 14 mΩ=(typ)@ V_GS = 4.5V
DPAK-L Package DPAK Package
Drain-Connected Tab
Drain-Connected Tab
G
S
G
S
Absolute Maximum Ratings (T_A=25°C unless otherwise noted)
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T_J=150°C ^(a)
Pulsed Drain Current ^(a)
Continuous Source Current (Source-Drain Diode) ^(a)
Maximum Power Dissipation ^(a)
Operating Junction and Storage Temperature Range
T_A = 25°C
T_A = 70°C
Value
30
±20
±52
±56
23
42
27
-55 to 150
Units
V
A
W
°C
Thermal Resistance
R_θJA
Maximum Junction-to-Ambient ^(a)
R_θJC
Maximum Junction-to-Case^(a)
96
°C/W
3.6
°C/W
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
[phone] Fax [phone]
9-19
6030LX.2001.05.0.91