 English |
|
|
|
|
|
|
|
| AHK6030LX Datasheet, PDF (2/4 Pages) Advanced Analogic Technologies – 30V N-Channel Power MOSFET | |||
| |||
| ◁ |
AHK6030LX
30V N-Channel Power MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Description
Conditions
Min
DC Characteristics
BVDS
Drain-Source Breakdown
Voltage
VGS=0V, ID=250µA
30
RDS(ON) Drain-Source ON-Resistance
VGS=10V, ID=10A
VGS=4.5V, ID=5A
ID(ON) On-State Drain Current
VGS=10V ,VDS=5V (Pulsed)
56
VGS(th) Gate Threshold Voltage
VGS=VDS, ID=250µA
1.0
IGSS Gate-Body Leakage Current
VGS=±20V, VDS=0V
IDSS Drain Source Leakage Current
VGS=0V,VDS=30V
VGS=0V,VDS=30V, TA=70°C
gfs
Forward Transconductance
VDS=15V, ID=10A
Dynamic Characteristics
QG
QGS
QGD
tD(ON)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay
tR
tD(OFF)
Turn-ON Rise Time
Turn-OFF Delay
tF
Turn-OFF Fall Time
Source-Drain Diode Characteristics
VSD Source-Drain Forward Voltage
IS
Continuous Diode Current
VDS=15V, ID=15A, VGS=10V
VDD=15V, VGS=10V, ID=15A,
RG=6â¦
VGS=0, IS=28A
Typ
Max Units
V
9.5
10.5
mâ¦
14
18
A
V
±100
nA
1
µA
25
19
S
45
65
nC
9
nC
7.5
nC
17
30
ns
11
20
ns
60
100
ns
45
80
ns
1
1.5
V
23
A
Notes:
(a) Based on thermal dissipation from junction to case. RθJC + RθCA = RθJA where the case thermal reference is defined as
the solder mounting surface of the drain pins. RθJC is guaranteed by design, however RθCA is determined by the PCB
design. Package current is limited to 28A DC.
(b) With minimum copper pads on 1 x 1 inch FR4 board.
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
6030LX.2001.05.0.91
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese