TCS3771 Datasheet, PDF (5/33 Pages) ams AG – COLOR LIGHT-TO-DIGITAL CONVERTER with PROXIMITY SENSING

TCS3771
COLOR LIGHT-TO-DIGITAL CONVERTER
with PROXIMITY SENSING
TAOS110A − MARCH 2011
Operating Characteristics, V_DD = 3 V, T_A = 255C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Active — LDR pulses off
235
330
I_DD Supply current
Wait mode
Sleep mode — no I²C activity
65
μA
2.5
10
3 mA sink current
0
0.4
V_OL INT, SDA output low voltage
I _LEAK Leakage current, SDA, SCL, INT pins
I _LEAK Leakage current, LDR pin
lid ^{VIH SCL, SDA input high voltage}
a ^VIL
SCL, SDA input low voltage
6 mA sink current
TCS37711 & TCS37715
TCS37713 & TCS37717
TCS37711 & TCS37715
TCS37713 & TCS37717
0
−5
−10
0.7 V_DD
1.25
V
0.6
5 μA
+10 μA
V
0.3 V_DD
V
0.54
v _{Optical Characteristics, VDD = 3 V, TA = 255C, GAIN = 16, ATIME = 0xF6 (unless otherwise noted) (see}
ill ^{Note 1)}
t ^PARAMETER
TEST
CONDITIONS
Red Channel
Green Channel
Blue Channel
Clear Channel
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
UNIT
s ^{AG nt s Re}
Irradiance
responsivity
λ_D = 465 nm
See Note 2
λ_D = 525 nm
See Note 3
λ_D = 625 nm
See Note 4
0%
8%
85%
15% 10%
25% 60%
110% 0%
42% 65%
85% 9%
15% 5%
88% 19.2
35% 22.4
25% 27.2
24 28.8
(counts/
28 33.6 μW/
cm²)
34 40.8
NOTES: 1. The percentage shown represents the ratio of the respective red, green, or blue channel value to the clear channel value.
e _{2. The 465 nm input irradiance is supplied by an InGaN light-emitting diode with the following characteristics:}
m ^{t dominant wavelength λD = 465 nm, spectral halfwidth Δλ½ = 22 nm, and luminous efficacy = 75 lm/W.}
3. The 525 nm input irradiance is supplied by an InGaN light-emitting diode with the following characteristics:
dominant wavelength λ_D = 525 nm, spectral halfwidth Δλ½ = 35 nm, and luminous efficacy = 520 lm/W.
a n 4. The 625 nm input irradiance is supplied by a AlInGaP light-emitting diode with the following characteristics:
dominant wavelength λ_D = 625 nm, spectral halfwidth Δλ½ = 9 nm, and luminous efficacy = 155 lm/W.
co RGBC Characteristics, V_DD = 3 V, T_A = 255C, AGAIN = 16, AEN = 1 (unless otherwise noted)
PARAMETER
l _{Dark ADC count value}
a _{ADC integration time step size}
TEST CONDITIONS
E_e = 0, AGAIN = 60×, ATIME = 0xD6 (100 ms)
ATIME = 0xFF
MIN TYP
0
1
2.27 2.4
MAX
5
2.56
UNIT
counts
ms
ADC number of integration steps
1
256 steps
ic ^{ADC counts per step}
0
1024 counts
ADC count value
n _{Gain scaling, relative to 1× gain}
Tech ^setting
ATIME = 0xC0 (153.6 ms)
4×
16×
60×
0
65535 counts
3.8
4
4.2
15
16 16.8 %
58
60
63
Copyright E 2011, TAOS Inc.
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