A82DL32X4T Datasheet, PDF (50/60 Pages) AMIC Technology – Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash

A82DL32x4T(U) Series
SRAM
DC Electrical Characteristics (TA = -40°C to +85°C, VCC_S = 2.7V to 3.6V, GND = 0V)
Symbol
Parameter
⎜ILI⎥
Input Leakage Current
- 70 ns
Min.
Max.
-
1
Unit
Conditions
µA VIN = GND to VCC_S
Output Leakage Current
⎜ILO⎥
-
ICC_S
Active Power Supply
-
Current
ICC1_S
-
Dynamic Operating
Current
ICC2_S
-
CE1_S = VIH or CE2_S = VIL
1
µA
or OE = VIH or WE = VIL
VI/O = GND to VCC
3
mA CE1_S = VIL, CE2_S = VIH
II/O = 0mA
Min. Cycle, Duty = 100%
30
mA CE1_S = VIL, CE2_S = VIH
II/O = 0mA
CE1_S = VIL, CE2_S = VIH
3
mA _{VIH = VCC_S, VIL = 0V}
f = 1 MHZ, II/O = 0mA
ISB_S
-
Standby Power Supply
Current
ISB1_S
-
VOL
Output Low Voltage
-
0.5
mA ^{VCC_S ≤ 3.3V, CE1_S = VIH or}
CE2_S =VIL
5
µA ^{VCC ≤ 3.3V, CE1_S ≥ VCC - 0.2V}
or CE2_S ≤ 0.2V, VIN ≥ 0V
0.4
V
IOL = 2.1mA
VOH
Output High Voltage
2.2
-
V
IOH = -1.0mA
Truth Table
Mode
CE1_S
CE2_S
OE
Standby
H
X
X
X
L
X
Output Disable
L
H
H
Read
L
H
L
Write
L
H
X
Note: X = H or L
WE
I/O Operation
Supply Current
X
High Z
ISB, ISB1
X
High Z
ISB, ISB1
H
High Z
ICC, ICC1, ICC2
H
DOUT
ICC, ICC1, ICC2
L
DIN
ICC, ICC1, ICC2
PRELIMINARY (August, 2005, Version 0.0)
49
AMIC Technology, Corp.