AMIS-42700 Datasheet, PDF (9/16 Pages) AMI SEMICONDUCTOR – Dual High-Speed CAN Transceiver

AMIS-42700 Dual High-Speed CAN Transceiver
Preliminary Data Sheet
8.0 Electrical Characteristics
8.1 Definitions
All voltages are referenced to GND. Positive currents flow into the IC. Sinking current means that the current is flowing into the
pin. Sourcing current means that the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 3: Absolute Maximum Ratings
Symbol
Parameter
Conditions
V_CC
V_CANH
V_CANL
V_TxD
V_RxD
V_S
V_REF
V_tran(CANH)
V_tran(CANL)
V_tran(VSPLIT)
V_{esd(CANL/CANH)}
V_esd
Supply voltage
DC voltage at pin CANH
DC voltage at pin CANL
DC voltage at pin TxD
DC voltage at pin RxD
DC voltage at pin S
DC voltage at pin V_REF
Transient voltage at pin CANH
Transient voltage at pin CANL
Transient voltage at pin Vsplit
ESD voltage at CANH and CANL pin
ESD voltage at all other pins
0 < V_CC < 5.25V; no time limit
0 < V_CC < 5.25V; no time limit
Note 1
Note 1
Note 1
Note 2
Note 4
Note 2
Note 4
Latch-up
Static latch-up at all pins
Note 3
T_stg
Storage temperature
T_amb
Ambient temperature
T_junc
Maximum junction temperature
Notes:
1) Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a, and 3b (see Figure 4).
2) Standardized human body model (HBM) ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is ±2 kV.
3) Static latch-up immunity: static latch-up protection level when tested according to EIA/JESD78.
4) Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
Min.
Max.
Unit
-0.3
+7
V
-45
+45
V
-45
+45
V
-0.3 V_CC + 0.3
V
-0.3 V_CC + 0.3
V
-0.3 V_CC + 0.3
V
-0.3 V_CC + 0.3
V
-150
+150
V
-150
+150
V
-150
+150
V
-8
+8
kV
-500
+500
V
-2
+2
kV
-250
+250
V
100
mA
-55
+155
°C
-40
+125
°C
-40
+150
°C
8.3 Thermal Characteristics
Symbol
R_th(vj-a)
R_th(vj-s)
Parameter
Thermal resistance from junction to ambient in SO8 package
Thermal resistance from junction to substrate of bare die
Conditions
In free air
In free air
Value Unit
145 K/W
45
K/W
AMI Semiconductor – Rev. 1.4, May 05 - Preliminary
www.amis.com
9