PI0512WS Datasheet, PDF (8/8 Pages) AMI SEMICONDUCTOR – 512-Pixel 50-mm-Pitch Wide Aperture Spectroscopic Photodiode Array

Electro-Optical Characteristics (25^oC)
Table 4 lists the electro-optical characteristics of PI0512WS sensor chip at 25^oC.
Table 4. Electro-optical characteristics.
Parameters
Symbol Min Typical
Center-to-center spacing
50
Aperture width
2500
Pixel area
Fill factor ¹
Quantum efficiency ^1,2
Responsivity ^1,2
Nonuniformity of response ³
Saturation exposure ²
A
FF
QE
R
Esat
1.25×10^-3
76
75
3.3×10^-4
2
180
Saturation charge
Average dark current ⁴
Qsat
55
60
1
Spectral response peak
λ
Spectral response range ⁵
600
180 – 1000
Max
5
3
Units
µm
µm
cm²
%
%
C/J/cm²
+/-%
nJ/cm²
pC
pA
nm
nm
Notes:
(1) Fill factor, quantum efficiency, and responsivity are related by the equation R =
(q_eλ/hc)^.QE^.FF^.A, where q_e is the charge of an electron and hc/λ is the energy of a
photon at a given wavelength.
(2) At wavelength of 575 nm (yellow-green) and with no window.
(3) Measured at 50% Vsat with incandescent tungsten lamp filtered with a Schott KG-1
heat-absorbing glass.
(4) Max dark leakage ≤ 1.5 x average dark leakage measured with an integration period
of 500 ms at 25^oC.
(5) From 250-1000 nm, responsivity ≥ 20% of its peak value.
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PI0512WS Page 8 of 8 – July 26, 2001