PI0512WS Datasheet, PDF (2/8 Pages) AMI SEMICONDUCTOR – 512-Pixel 50-mm-Pitch Wide Aperture Spectroscopic Photodiode Array

The WS series devices are mounted in 22-pin ceramic side-brazed dual-in-line packages that
will insert in a standard DIP socket. A diagram of the package and its pinout configuration is
seen in Figure 1.
Features
• High saturation capacitance (60pF ) for wide dynamic range.
• Wide spectral response (180-1000) for UV and IR response.
• PN junction photodiodes highly resistive to UV damage.
• Low dark current.
• Integration time from 0.52 ms to 0.6 seconds at room temperature.
• Longer integration time extended to hours by cooling.
• High linearity.
• Low power dissipation.
• Geometrical structure to enhance stability and registration.
• Standard 22-lead dual-in-line integrated-circuit package.
Sensor Characteristics
The Peripheral Imaging Corporation's self-scanned photodiodes are on 50-µm center-to-center
spacing. Hence, their line density 20 diodes/mm and accordingly the overall die lengths of the
different arrays vary with the number of photodiodes. For example, the 256-pixel array is
12.8-mm long and the 512 pixel array is 25.6-mm long. In addition, each array has four
additional dummy, non-imaging photodiodes with two on each side. The height of the sensors is
2500 µm. Accordingly, these slit-like apertures make these sensors desirable for coupling to
monochromators and spectrographs.
Figure 2. Geometry and layout of photodiode pixels.
PI0512WS Page 2 of 8 – July 26, 2001