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AMIS-30623 Datasheet, PDF (8/67 Pages) AMI SEMICONDUCTOR – LIN Microstepping Motordriver
AMIS-30623 LIN Microstepping Motordriver
Data Sheet
10.0 DC Parameters
The DC parameters are given for Vbb and temperature in their operating ranges. Convention: currents flowing in the circuit are defined
as positive.
Table 5: DC Parameters
Symbol Pin(s) Parameter
Test Conditions
Motordriver
IMSmax,Peak
IMSmax,RMS
Max current through motor coil in
normal operation
Max RMS current through coil in
normal operation
IMSabs
IMSrel
RDSon
MOTXP Absolute error on coil current
MOTXN Error on current ratio Icoilx / Icoily
MOTYP
MOTYN
Vbb = 12V, Tj = 50 °C
On resistance for each motor pin Vbb = 8V, Tj = 50 °C
(including bond wire) at IMSmax
Vbb = 12V, Tj = 150 °C
Vbb = 8V, Tj = 150 °C
IMSL
LIN Transmitter
Pull down current
HiZ mode
Ibus_on
Dominant state, driver on
Vbus = 1.4V
Ibus_off
Dominant state, driver off
Ibus_off
LIN
Recessive state, driver off
Vbus = 0V
Vbus = Vbat
Ibus_lim
Current limitation
Rslave
LIN Receiver
Pull-up resistance
Vbus_dom
Vbus_rec
LIN
Receiver dominant state
Receiver recessive state
Vbus_hys
Receiver hysteresis
Thermal Warning & Shutdown
Ttw
Thermal warning
Ttsd(1) (2)
Thermal shutdown
Tlow (2)
Low temperature warning
Supply and Voltage Regulator
Vbb
Nominal operating supply range
VbbOTP
Ibat
VBB
Supply voltage for OTP zapping (3)
Total current consumption
Unloaded outputs
Ibat_s
Sleep mode current consumption
Vdd
Internal regulated output (4)
8V < Vbb < 18V
IddStop
VddReset
VDD
Digital current consumption
Vbb < UV2
Digital supply reset level @ power
down (5)
IddLim
Current limitation
Pin shorted to ground
Switch Input and Hardwire Address Input
Rt_OFF
Rt_ON
Vbb_sw
SWI
HW2
Switch OFF resistance (6)
Switch ON resistance (6)
Switch to Gnd or Vbat,
Vbb range for guaranteed operation
of SWI and HW2
Vmax_sw
Maximum voltage
T < 1s
Min.
Typ.
Max. Unit
-10
-7
40
-1
50
20
0
0.6 * Vbb
0.05 * Vbb
138
6.5
9.0
4.75
10
6
800
570
0.50
0.55
0.70
0.85
2
30
145
Ttw + 10
Ttw - 155
3.50
50
5
2
mA
mA
10
%
7
%
1
Ω
1
Ω
1
Ω
1
Ω
mA
mA
mA
20
µA
200
mA
47
kΩ
0.4 *Vbb
V
Vbb
V
0.2 * Vbb V
152
°C
°C
°C
18
V
10.0
V
10.0
mA
100
µA
5.50
V
mA
4.5
V
42
mA
kΩ
2
kΩ
29
V
40V
V
AMI Semiconductor – June 2006, Rev 3.0
8
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