PI3041A Datasheet, PDF (7/18 Pages) AMI SEMICONDUCTOR – Contact Image Sensor 300DPI CIS Sensor Chip

Preliminary PI3041A datasheet
Second Setup: The CIS modules made with these devices operate in excess of 5.0 MHz.
Accordingly the wafer probe specifications are supplemented with high frequency clocking
performance using an A6 length module’s PCB board.
Electro-Optical Characteristics (25^o C)
The electro-optical characteristics of PI3041A imaging sensor chip are listed in Table 2. This is the
wafer probe specification used to tests the each die at 25^o C.
Parameters
Number of Photo-elements
Pixel-to-pixel spacing
Line scanning rate
Clock frequency
Output voltage
Output voltage non-uniformity
Dark output voltage
Dark output non-uniformity
Adjacent Pixel non-uniformity
Chip-to-chip non-uniformity
Symbols
Tint ⁽¹⁾
Fclk ⁽²⁾
Vpavg ⁽³⁾
Up ⁽⁴⁾
Vd ⁽⁵⁾
Ud ⁽⁶⁾
Upadj ⁽⁷⁾
Ucc ⁽⁸⁾
Typical
128
~83.3
128/Fclk
500
1.85 ± 0.35
± 7.5
<100
<100
<6.5
±5
Units
elements
µm
µs/line
KHz
V
%
mV
mV
%
%
Notes
See note 2 for higher clock
speed. (maximum 5 MHz)
Table 2. Electro-Optical Characteristic
Notes: (1)
(2)
(3)
Tint stands for the line scanning rate or the integration time. It is determined by
the time interval between two start pulses, where the start pulses start the line-
scan process, as soon as, CP, module clock, acquires it and shifts it into the
internal shift register. The minimum integration time in one line scan of the
sensor is number of pixel sites divided by its clock frequency. In a CIS module it
is the number of sensors times the number of pixel in the sensor, all over the
clock frequency. Tint in the wafer probe is set with the calibration procedure use
to set the amplitude of Vpavg, see note (3).
Fclk is the device’s clock, CP, frequency and it is, also, equal to the pixel rate. In
the wafer test Fclk is set to 500 KHz. However, PIC (recently acquired by AMIS)
has been successfully mass-producing high frequency CIS modules, using only
the wafer test to qualify them. Hence, the devices are constantly tested for their
standard high-speed performance with each A6 modules in production. These
module production tests as proven that the low speed wafer probe tests are
sufficient to produce reliable image devices.
Vpavg = ∑Vp(n)/Npixels (average level in one line scan).
Where Vp(n) is the amplitude of n^th pixel in the sensor chip and
Npixels is the total number of pixels in sensor chip. Vpavg is converted from
impulse current video pixel into a voltage output. See Figure 4, Video Pixel
Output in section Output Circuit Of The Image Sensor and Figure 5, Video
Output Test and Application Circuit in section Signal Conversion Circuit on page
6 and 7. There Is a calibration procedure to calibrate Vpavg using Tint as
variable to control the exposure. Hence, Vpavg is calibrated for each image
Page 7 of 18 Date: 09/23/05