AMIS-39101 Datasheet, PDF (7/15 Pages) AMI SEMICONDUCTOR – Octal High-Side Driver with Protection

AMIS-39101: Octal High-Side Driver with Protection
Data Sheet
8.3 Electrical Parameters
Operation outside the operating ranges for extended periods may affect device reliability. Total cumulative dwell time above the
maximum operating rating for the power supply or temperature must be less than 100 hours.
The parameters below are independent from load type (see Section 8.4).
8.3.1. Operating Ranges
Table 6: Operating Ranges
Symbol
Description
VDDN
Digital power supply voltage
Vdig_in
VS ⁽¹⁾
Voltage on digital inputs CLK, PDB, WR, DIN
VS power supply on Pins VS1 to VS4
Tamb
Note:
(1)
Ambient temperature
The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj of 130°C.
Min.
3.1
-0.3
3.5
-40
Max. Unit
5.5
V
VDDN
V
28
V
85
°C
8.3.2. Electrical Characteristics
Table 7: Electrical Characteristics
Symbol
Description
I_VS_norm⁽¹⁾
Consumption on VS without load currents
In normal mode of operation PDB = high
I_PDB_3.3⁽¹⁾⁽²⁾
Sum of VS and VDDN consumption in power-down mode of operation
PDB = low, VDDN 3.3V, VS = 24V, 23°C ambient
CLK and WR are at VDDN voltage
I_PDB_5⁽¹⁾⁽²⁾
Sum of VS and VDDN consumption in power-down mode of operation
PDB = low, VDDN 5V, VS = 24V, 23°C ambient
CLK and WR are at VDDN voltage
I_PDB_MAX_VS
VS consumption in power-down mode of operation PDB = low, VS = 28V
I_VDDN_norm⁽¹⁾
Consumption on VDDN
In normal mode of operation PDB = high
CLK is 500kHz, VDDN = 5.5V, VS = 28V
R_on_1..8
I_OUT_lim_x⁽¹⁾
On resistance of the output drivers 1 through 8
t VS= 24V (nominal VS power supply condition)
t VS = 4.6V (worst case VS power supply condition)
Internal over-current limitation of HS driver outputs
The time from short of HS driver OUTx pin to GND and the driver
T_shortGND_HSdoff
deactivation; driver is Off
Detection works from VS minimum of 7V
VDDN minimum is 3V
TSD_H ⁽¹⁾
High TSD threshold for junction temperature (temperature rising)
TSD_HYST
TSD hysteresis for junction temperature
Notes:
(1) The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj.
(2) The cumulative operation time mentioned above may cause permanent device failure.
Min.
Max. Unit
3.5
mA
25
µA
40
µA
10
µA
1.6
mA
1
Ω
3
Ω
0.65
2
A
5,4
µs
130
170
°C
9
18
°C
8.4 Load Specific Parameters
High-side driver parameters for specific loads are specified in following categories:
A. Parameters for inductive loads up to 350mH and T_ambient up to 85°C
B. Parameters for inductive loads up to 300mH and T_ambient up to 85°C
C. Parameters for resistive loads and T_ambient up to 85°C
AMI Semiconductor – November 06 - M-20638-001
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