AMIS-39100 Datasheet, PDF (7/16 Pages) AMI SEMICONDUCTOR – Octal High Side Driver with Protection

AMIS-39100: Octal High Side Driver with Protection
Data Sheet
8.3 Electrical Parameters
Operation outside the operating ranges for extended periods may affect device reliability. Total cumulative dwell time above the
maximum operating rating for the power supply or temperature must be less than 100 hours.
The parameters below are independent from load type (see Section 8.4).
8.3.1. Operating Ranges
Table 6: Operating Ranges
Symbol
Description
VDDN
Digital power supply voltage
Vdig_in
VB ⁽¹⁾
Voltage on digital inputs CLK, PDB, WR, DIN
DC battery supply on Pins VB1 to VB4
Tamb
Ambient temperature
Notes:
(1) The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj of 130°C.
Min.
3.1
-0.3
3.5
-40
Max. Unit
5.5
V
VDDN V
16
V
105
°C
8.3.2. Electrical Characteristics
Table 7: Electrical Characteristics
Symbol
I_VB_norm⁽¹⁾
Description
Consumption on VB without load currents
I_PDB_3.3⁽¹⁾⁽²⁾
In normal mode of operation PDB = high
Sum of VB and VDDN consumption in power down mode of operation
PDB = low, VDDN 3.3V, VB = 12V, 23°C ambient
I_PDB_5⁽¹⁾⁽²⁾
CLK and WR are at VDDN voltage
Sum of VB and VDDN consumption in power down mode of operation
PDB = low, VDDN 5V, VB = 24V, 23°C ambient
CLK and WR are at VDDN voltage
I_PDB_MAX_VB
I_VDDN_norm⁽¹⁾
VB consumption in power down mode of operation PDB = low, VB = 16V
Consumption on VDDN
In normal mode of operation PDB = high
CLK is 500kHz, VDDN = 5.5V, VB = 16V
R_on_1..8
On resistance of the output drivers 1 through 8
Vb= 16V (normal battery conditions and Tamb = 25°C)
Vb = 4.6V (worst case battery condition and Tamb = 25°C)
I_OUT_lim_x⁽¹⁾
Internal over-current limitation of HS driver outputs
T_shortGND_HSdoff
The time from short of HS driver OUTx pin to GND and the driver
de-activation; driver is Off.
Detection works from VB minimum of 7V
TSD_H ⁽¹⁾
VDDN minimum is 3V
High TSD threshold for junction temperature (temperature rising)
TSD_HYST
TSD hysteresis for junction temperature
Notes:
(1) The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj.
(2) The cumulative operation time mentioned above may cause permanent device failure.
Min.
0.65
5,4
130
9
Max. Unit
3.5
mA
25
µA
40
µA
10
µA
1.6
mA
1
Ω
3
Ω
2
A
µs
170
°C
18
°C
AMI Semiconductor – Jan. 07, M-20557-002
7
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