AMIS-721250 Datasheet, PDF (5/12 Pages) AMI SEMICONDUCTOR – Contact Image Sensor

AMIS-721250: Contact Image Sensor
4.3 Wafer Scribe Line
Figure 3 outlines the scribe line dimensions surrounding the sensor die on a wafer.
60µm
15µm
425µm
55µm
60µm
14560µm
55µm
Figure 3: Wafer Scribe Line
Data Sheet
5.0 Electro-Optical Specifications
Table 2 lists the electro-optical specifications of the AMIS-721250 sensor at 25^°C and Vdd = 5.0V.
Table 2: Electro-Optical Specifications
Parameter
Symbol
Min.
Number of pixels ⁽¹⁾
344 or 688
Pixel-to-pixel spacing ⁽¹⁾
42.3 / 21.15
Sensitivity @ 600dpi ⁽²⁾
Sv
Sensitivity @ 1200dpi
Saturation voltage ⁽³⁾
Photo-response non-uniformity ⁽⁴⁾
Adjacent photo-response non-uniformity ⁽⁵⁾
Dark output voltage level ⁽⁶⁾
Dark output non-uniformity ⁽⁷⁾
Random thermal noise (rms) ⁽⁸⁾
Sensor-to-sensor photo-response non-uniformity ⁽⁹⁾
Photo response linearity ⁽¹⁰⁾
VSat
Up
Upn
Vd
Ud
Vno
Usensor
PRL
Analog output drive current
Iout
Notes for Table 2 are listed on the next page under “Definitions of Electro-Optical Specifications”.
Typ.
1220
610
1.65
1.7
3.0
>1.0
Max.
344 or 688
42.3 / 21.15
15
15
100
10
2
Units
µm
V / uJ / cm²
Volts
%
%
V
mV
mV
%
%
mA
AMI Semiconductor – Dec. 05, M-20496-004
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