AMIS-720649 Datasheet, PDF (5/10 Pages) AMI SEMICONDUCTOR – Contact Image Sensor

AMIS-720649: Contact Image Sensor
5.3 Wafer Scribe Line
Figure 3 outlines the scribe line dimensions surrounding the sensor die on a wafer.
60µm
15µm
380µm
55µm
60µm
14560µm
55µm
Data Sheet
Figure 3: Wafer Scribe Line
6.0 Electro-Optical Specifications
Table 2 lists the electro-optical specifications of the AMIS-720649 sensor at 25^°C and Vdd = 5.0V.
Table 2: Electro-Optical Specifications
Parameter
Symbol
Number of pixels
Pixel-to-pixel spacing
Sensitivity ⁽¹⁾
Saturation voltage ⁽²⁾
Photo-response non-uniformity ⁽³⁾
Adjacent photo-response non-uniformity ⁽⁴⁾
Dark output voltage level ⁽⁵⁾
Dark output non-uniformity ⁽⁶⁾
Random thermal noise (rms) ⁽⁷⁾
Sensor-to-sensor photo-response non-uniformity ⁽⁸⁾
Photo response linearity ⁽⁹⁾
Sv
Vsat
Up
Upn
Vd
Ud
Vno
Usensor
PRL
Notes for Table 2 are listed on the next page under “Definitions of Electro-Optical Specifications”.
Min.
344
42.3
Typical
665
2.0
0.7
4
Max.
344
42.3
7.5
7.5
100
7.5
2.0
Units
µm
V / µJ / cm²
V
%
%
V
mV
mV
%
%
AMI Semiconductor – Dec. 05, M-20488-001
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