AMIS-40615 Datasheet, PDF (10/17 Pages) AMI SEMICONDUCTOR – LIN Transceiver with 3.3V Voltage Regulator

AMIS-40615
LIN Transceiver with 3.3V Voltage Regulator
Data Sheet
Table 7: DC Characteristics LIN Transmitter
Symbol
Parameter
Conditions
Pin LIN
VLin_dom_LoSup
VLin_dom_HiSup
LIN dominant output voltage
LIN dominant output voltage
TXD = low; V_bb = 7.3V
TXD = low; V_bb = 18V
VLin_rec
LIN recessive output voltage
TXD = high; Ilin = 0mA
ILIN_lim
Short circuit current limitation
VLin = Vbb_max
Rslave
Internal pull-up resistance
ILIN_off_dom
LIN output current bus in dominant state Driver off; V_bb = 12V
ILIN_off_rec
LIN output current bus in recessive state Driver off; V_bb = 12V
ILIN_no_GND
Communication not affected
Vbb = GND = 12V; 0 < VLin < 18V
ILIN_no_Vbb
LIN bus remains operational
Vbb = GND = 0V; 0 < VLin < 18V
Note:
1. Vγ is the forward diode voltage. Typically (over the complete temperature) Vγ = 1V.
Min.
V_bb - Vγ ⁽¹⁾
40
20
-1
-1
Typ.
33
Max. Unit
1.2
V
2.0
V
V
130 mA
47
kΩ
mA
20
µA
1
mA
100 µA
Table 8: DC Characteristics LIN Receiver
Symbol
Parameter
Pin LIN
Vrec_dom
Receiver threshold
Vrec_rec
Receiver threshold
Vrec_cnt
Receiver center voltage
Vrec_hys
Receiver hysteresis
Conditions
LIN bus recessive → dominant
LIN bus dominant → recessive
(Vbus_dom + Vbus_rec) / 2
Min.
0.4
0.4
0.475
0.05
Typ.
Max.
0.6
0.6
0.525
0.175
Unit
V_bb
V_bb
V_bb
V_bb
Table 9: DC Characteristics I/Os
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Pin WAKE
V_wake_th
I_leak
Threshold voltage
Input leakage current ⁽¹⁾
Vwake = 0V; V_bb = 18V
0.35
0.65
V_bb
-1
-0.5
1
µA
T_wake_min
Debounce time
Sleep mode; rising and falling edge
8
54
µs
Pins TxD and STB
Vil
Low level input voltage
0.8
V
Vih
High level input voltage
2.0
V
Rpu
Pull-up resistance to Vcc ⁽¹⁾
50
200
kΩ
Pin INH
Delta_VH
High level voltage drop
IINH = 15mA
0.35
0.75
V
I_leak
Leakage current
Sleep mode; VINH = 0V
-1
1
µA
Pin EN
Vil
Low level input voltage
0.8
V
Vih
High level input voltage
Rpd
Pull-down resistance to ground ⁽¹⁾
2.0
V
50
200
kΩ
Pin RxD
Vol
Low level output voltage
Isink = 2mA
0.65
V
Voh
High level output voltage
Isource = -2mA
V_cc - 0.65V
V
Note:
1. By one of the trimming bits, following reconfiguration can be done during chip-level testing in order to fit the AMIS-40615 into different interface: pins TxD and EN
will have typ. 10kΩ pull-down resistor to ground and pin WAKE will have typ. 10µA pull-up current source.
Table 10: DC Characteristics
Symbol
Parameter
POR
PORH_Vbb
POR high level V_bb comparator
PORL_Vbb
POR_Vbb_hyst
POR low level V_bb comparator
Hysteresis of POR level V_bb comparator
POR_Vbb_sl
Maximum slope on V_bb to guarantee POR
PORH_Vcc
POR high level V_cc comparator
PORL_Vcc
POR low level V_cc comparator
POR_Vcc_hyst
Hysteresis of POR level V_cc comparator
TSD
Tj
Junction temperature
Tj_hyst
Thermal shutdown hysteresis
Conditions
For shutdown
Min.
3
100
2
100
165
9
Typ.
Max.
4.5
50
3
195
18
Unit
V
V
mV
V/ms
V
V
mV
°C
°C
AMI Semiconductor – March 2007, M-20544-001
10
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