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| AM29DL400B_05 Datasheet, PDF (39/47 Pages) Advanced Micro Devices – 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory | |||
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AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program
Operations
Parameter
JEDEC
Std Description
tAVAV
tWC Write Cycle Time (Note 1)
Min
tAVWL
tAS Address Setup Time
Min
tELAX
tAH Address Hold Time
Min
tDVEH
tDS Data Setup Time
Min
tEHDX
tDH Data Hold Time
Min
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
tWLEL
tWS WE# Setup Time
Min
tEHWH
tWH WE# Hold Time
Min
tELEH
tCP CE# Pulse Width
Min
tEHEL
tCPH CE# Pulse Width High
Min
tWHWH1
tWHWH1
Programming Operation (Note
2)
Byte
Word
Typ
Typ
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
Typ
Notes:
1. Not 100% tested.
2. See the âErase and Programming Performanceâ section for more information.
Speed Options
-70 -80 -90 -120
70
80
90 120
0
45
45
45
50
35
35
45
50
0
Unit
ns
ns
ns
ns
ns
0
ns
0
ns
0
ns
35
35
35
50
ns
30
ns
9
µs
11
0.7
sec
Am29DL400B
37
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