English
Language : 

AS4C64M16MD2-25BCN Datasheet, PDF (84/129 Pages) Alliance Semiconductor Corporation – Configurable Drive Strength
AS4C64M16MD2-25BCN
AS4C32M32MD2-25BCN
Table 28 — Single-ended levels for CK, DQS, CK#, DQS#
Symbol
Parameter
LPDDR2-800
Min
Max
Unit
Notes
VSEH(AC)
Single-ended high-level for strobes
Single-ended high-level for CK, CK#
(VDDQ/2) +0.220
(VDD2/2) +0.220
Note 3
Note 3
V
1,2
V
1,2
VSEL(AC)
Single-ended low-level for strobes
Single-ended low-level for CK, CK#
Note 3
Note 3
(VDDQ/2) - 0.220
V
1,2
(VDD2/2) - 0.220
V
1,2
NOTE 1 For CK, CK# use VSEH/VSEL(AC) of CA; for strobes (DQS0, DQS0#, DQS1, DQS1#, DQS2, DQS2#, DQS3, DQS3#) use
VIH/VIL(AC) of DQs.
NOTE 2 VIH(AC)/VIL(AC) for DQs is based on VREFDQ; VSEH(AC)/VSEL(AC) for CA is based on VREFCA; if a reduced ac-high or
ac-low level is used for a signal group, then the reduced level applies also here
NOTE 3 These values are not defined, however the single-ended signals CK, CK#, DQS0, DQS0#, DQS1, DQS1#, DQS2, DQS2#, DQS3,
DQS3# need to be within the respective limits (VIH(DC) max, VIL(DC)min) for single-ended signals as well as the limitations for overshoot
and undershoot.
Refer to Overshoot and Undershoot Specifications”
Confidential
- 84/129 -
Rev.1.0 July 2016