AK2573A Datasheet, PDF (31/38 Pages) Asahi Kasei Microsystems – 125M / 156M Laser Diode Driver + APC

ASAHI KASEI
[AK2573A]
8.3 EEPROM
EEPROM memory map is shown in Table 8-3, 8-4 and 8-5.
EEPROM access islimited with WP pin and Operation mode (refer to Table 9-1, for more information).
WP = “L”: Full access
WP = “H”: User area only with read only
(Note) The AKM factory adjusted data are stored in advance at address (Device Address2 = 011, Address=60h) for
the offset of the on-chip temperature sensor. If such excess temperature stress is to be applied to this device
which exceeds a guaranteed EEPROM data retention conditions ( for 10 years at 85℃), it is important to read
the pre-determined value in advance and to re-write the same data back into EEPROM after an exposure to
the excess temperature environment. Even if the exposure time is shorter than the retention time, any
accelerated temperature stress tests (such as baking) are performed, it is recommended to read the pre-set
data first and to re-write it after the tests.
Table 8-3 EEPROM Address MAP
Device Address DATA (D7-D0)
Initial Remark
Address
Value
A0h 00h (0)
User Area
00h
～
(1kbit)
7Fh (127)
A0h 80h (128) No Memory
～
FFh (255)
A2h 00h (0)
～
FFh (255)
A4h 00 h(0)
～
E_DAC1_TC
00h
Temperature data for I-DAC1 (1kbit)
Addressing with R_TEMP
(1.5℃ step)
7F h(127)
A4h 80h (128) E_DAC2_TC
00h Addressing with R_TEMP
～
Temperature data for I-DAC2 (1kbit)
(1.5℃ step)
FFh (255)
A6h 00h (0)
E_DUTY_TC (5bit)
00h Addressing with MSB 5bit of
～
Temperature data for Duty
R_TEMP
1Fh(31) Adjustment (256bit)
(6℃ step)
A6h 20h (32) E_APC_TRGT_TC (5bit)
00h Addressing with MSB 5bit of
～
Temperature data for APC FB
R_TEMP
3Fh (63) ^{reference (R_APC_TARGT) (256bit)}
(6℃ step)
A6h 40h (64) MSB 4bit: E_CURRALM_DAC1_TC FFh Addressing with MSB 5bit of
～
LSB 4bit: E_CURRALM_DAC2_TC
R_TEMP
5Fh (95) ^{Temperature data for CURRALM}
(6℃ step)
(256bit)
A6h 60h (96) Adjustment data
～
(256bit)
see Table 8-4 and 8-5
7Fh (255)
<MS0189-E-01>
-31-
2004/5