APT25GP90BDF1 Datasheet, PDF (8/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

60
50
T_J = 150°C
40
T_J = 125°C
30
20
T_J = 25°C
10
T_J = -55°C
0
0
1
2
3
4
5
6
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
1400
1200
T_J = 125°C
V_R = 667V
30A
1000
15A
800
600
7.5A
400
200
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
Q_rr
t_rr
1.0
t_rr
0.8
0.6 ^IRRM
Q_rr
0.4
0.2
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
80
70
60
50
40
30
20
10
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
APT25GP90BDF1
350
30A
T_J = 125°C
V_R = 667V
300
250
15A
200
7.5A
150
100
50
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
18
T_J = 125°C
16 ^{VR = 667V}
30A
14
12
10
8
15A
6
7.5A
4
2
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
25
Duty cycle = 0.5
T_J = 150°C
20
15
10
5
0 ₂₅
50
75
100 125 150
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature