APT25GP90BDF1 Datasheet, PDF (7/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT25GP90BDF1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT25GP90BDF1
UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 86°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
15
21
Amps
80
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 25A
I_F = 50A
I_F = 25A, T_J = 125°C
3.6
4.6
Volts
2.7
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
33
ns
t_rr
Reverse Recovery Time
-
65
Q_rr
Reverse Recovery Charge
I_F = 15A, di_F/dt = -200A/µs
V_R = 667V, T_C = 25°C
-
60
nC
I_{RRM Maximum Reverse Recovery Current}
-
2
-
Amps
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_{RRM Maximum Reverse Recovery Current}
I_F = 15A, di_F/dt = -200A/µs
V_R = 667V, T_C = 125°C
-
260
ns
-
600
nC
-
5
-
Amps
t_rr
Reverse Recovery Time
-
110
Q_rr
Reverse Recovery Charge
I_F = 15A, di_F/dt = -1000A/µs
V_R = 667V, T_C = 125°C
-
900
I_{RRM Maximum Reverse Recovery Current}
-
15
ns
nC
Amps
1.20
0.9
1.00
0.7
0.80
0.60
0.5
Note:
0.40
0.3
t1
0.20
0
10^-5
0.1
SINGLE PULSE
0.05
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction
temp (°C)
Power
(watts)
RC MODEL
0.676 °C/W
0.00147 J/°C
0.504 °C/W
0.0440 J/°C
Case temperature (°C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL