APT25GP90BDF1 Datasheet, PDF (6/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

APT15DF100
V_CC
I_C V_CE
A
D.U.T.
Figure 21, Inductive Switching Test Circuit
90%
t_d(off)
90%
GateVoltage _{TJ = 125°C}
DrainVoltage
t_f
Switching Energy
10%
0
Drain Current
Figure 23, Turn-off Switching Waveforms and Definitions
10%
t_d(on)
t_r
5%
90%
10%
Switching Energy
APT25GP90BDF1
Gate Voltage
T_J = 125°C
Drain Current
5%
DrainVoltage
Figure 22, Turn-on Switching Waveforms and Definitions
V_TEST
*DRIVER SAME TYPE AS D.U.T.
A
100uH
A
DRIVER*
V_CE
I_C
V_CLAMP
B
D.U.T.
Figure 24, EON1 Test Circuit
F_max = min(f_max1, f_{max 2} )
f _{max 1}
=
t _{d (on )}
0.05
+ t _r + t _{d(off )}
+ t_f
f_{max 2}
=
P_diss − P_cond
E_on2 + E_off
P_diss
=
T_J − T_C
R _θJC