APT50GF120JRDQ3 Datasheet, PDF (7/9 Pages) Advanced Power Technology – FAST IGBT & FRED

TYPICAL PERFORMANCE CURVES
APT50GF120JRDQ3
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT50GF120JRDQ3 UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 85°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
60
73
Amps
540
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 75A
I_F = 150A
I_F = 75A, T_J = 125°C
2.8
3.48
2.17
Volts
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX- UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
60
ns
t_rr
Reverse Recovery Time
-
265
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 60A, di_F/dt = -200A/µs
V_R = 800V, T_C = 25°C
-
-
560
5
nC
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 60A, di_F/dt = -200A/µs
V_R = 800V, T_C = 125°C
-
350
ns
-
2890
nC
-
13
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
150
ns
I_F = 60A, di_F/dt = -1000A/µs
-
4720
-
V_R = 800V, T_C = 125°C
nC
-
40
Amps
0.60
0.50
D = 0.9
0.40
0.7
0.30
0.5
Note:
0.20
0.3
t1
t2
0.10
0.1
0.05
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
T_J (°C)
T_C (°C)
Dissipated Power
(Watts)
0.149
0.006
0.238
0.091
0.174
0.524
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL