APT50GF120JRDQ3 Datasheet, PDF (3/9 Pages) Advanced Power Technology – FAST IGBT & FRED

TYPICAL PERFORMANCE CURVES
160
V_GE = 15V
140
T_J = -55°C
120
T_J = 25°C
100
80
T_J = 125°C
60
40
20
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
160
250µs PULSE
TEST<0.5 % DUTY
140
CYCLE
120
100
T_J = -55°C
80
60
T_J = 25°C
40
20
T_J = 125°C
0
0 2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
T_J = 25°C.
I_C = 150A
250µs PULSE TEST
<0.5 % DUTY CYCLE
4
3
I_C = 75A
2
I_C = 37.5A
1
0
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
350
15V
300
APT50GF120JRDQ3
250
13V
200
12V
150
11V
100
10V
9V
50
8V
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 75A
14 ^{TJ = 25°C}
V_CE = 240V
V_CE = 600V
12
10
V_CE = 960V
8
6
4
2
0
0 100 200 300 400 500 600
GATE CHARGE (nC)
FIGURE 4, Gate Charge
5
I_C = 150A
4
3
I_C = 75A
I_C = 37.5A
2
1
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
180
160
140
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature