APT50GF120JRDQ3 Datasheet, PDF (4/9 Pages) Advanced Power Technology – FAST IGBT & FRED

45
40
V_GE = 15V
35
30
25
20
15
10 V_CE = 800V
5
T_J = 25°C or 125°C
R_G = 1.0Ω
0 ^{L = 100µH}
10 30 50 70
90 110 130 150 170
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
250
R_G = 1.0Ω, L = 100µH, V_CE = 800V
200
T_J = 25 or 125°C,V_GE = 15V
150
100
50
0 _{10 30 50 70 90 110 130 150 170}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
50
V_CE = 800V
V_GE = +15V
R_G = 1.0Ω
40
T_J = 125°C
30
20
10
T_J = 25°C
0 _{10 30 50 70 90 110 130 150 170}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
80
V_CE = 800V
70
V_GE = +15V
T_J = 125°C
E_on2,150A
60
50
40
30
E_on2,75A
20
E_off,150A
10
0
0
E_off,75A
E_off,37.5A ^Eon2,37.5A
5
10
15
20
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT50GF120JRDQ3
500
400
300
V_GE =15V,T_J=125°C
V_GE =15V,T_J=25°C
200
100
V_CE = 800V
R_G = 1.0Ω
L = 100µH
0
10 30 50 70 90 110 130 150 170
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
140
R_G = 1.0Ω, L = 100µH, V_CE = 800V
120
100
T_J = 125°C, V_GE = 15V
80
60
T_J = 25°C, V_GE = 15V
40
20
0
10 30 50 70 90 110 130 150 170
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
14
V_CE = 800V
V_GE = +15V
12 ^RG ^{= 1.0Ω}
10
T_J = 125°C
8
6
4
T_J = 25°C
2
0
10 30 50 70 90 110 130 150 170
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
50
V_CE = 800V
V_GE = +15V
R_G = 1.0Ω
40
E_on2,150A
30
20
E_on2,75A
10
E_off,150A
E_off,75A
0
E_on2,37.5A
E_off,37.5A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature