APT45GP120JDQ2 Datasheet, PDF (7/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT45GP120JDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT45GP120JDQ2
UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 100°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
26
37
Amps
210
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 45A
I_F = 90A
I_F = 40A, T_J = 125°C
2.9
3.56
2.28
Volts
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
25
ns
t_rr
Reverse Recovery Time
-
300
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -200A/µs
V_R = 800V, T_C = 25°C
-
360
nC
-
4
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -200A/µs
V_R = 800V, T_C = 125°C
-
380
ns
-
1700
nC
-
8
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
160
I_F = 30A, di_F/dt = -1000A/µs
V_R = 800V, T_C = 125°C
-
2550
-
28
ns
nC
Amps
1.20
1.00
0.9
0.80
0.7
0.60
0.5
Note:
0.40
0.3
t1
t2
0.20
0.1
SINGLE PULSE
Duty Factor D = ^t1/t2
0.05
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp (°C)
0.219
0.00306
Power
(watts)
0.468
0.0463
0.341
0.267
Case temperature (°C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL