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| APT45GP120JDQ2 Datasheet, PDF (1/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT | |||
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TYPICAL PERFORMANCE CURVES
®
APT1425G0P01V20JDQ2
APT45GP120JDQ2
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
⢠Low Conduction Loss
⢠Low Gate Charge
⢠Ultrafast Tail Current shutoff
⢠100 kHz operation @ 800V, 16A
⢠50 kHz operation @ 800V, 30A
⢠RBSOA Rated
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise speciï¬ed.
APT45GP120JDQ2
UNIT
VCES
VGE
I C1
I C2
I CM
RBSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Reverse Biad Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
75
34
170
170A @ 960V
329
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 750µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
1200
3
4.5
6
Volts
3.3 3.9
3.0
750
µA
3000
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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