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APT45GP120JDQ2 Datasheet, PDF (2/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
RBSOA Reverse Bias Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
Test Conditions
MIN
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 45A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 960V
170
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 45A
RG = 5Ω
TJ = +25°C
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 45A
RG = 5Ω
TJ = +125°C
APT45GP120JDQ2
TYP
3995
300
55
7.5
185
25
80
MAX
UNIT
pF
V
nC
A
18
29
ns
100
38
900
1870
µJ
905
18
29
ns
150
80
900
3080
µJ
2255
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
RθJC Junction to Case (IGBT)
RθJC Junction to Case (DIODE)
WT
Package Weight
VIsolation RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500
TYP
29.2
MAX
.38
1.10
UNIT
°C/W
gm
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.