APT40GP90JDQ2 Datasheet, PDF (7/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT40GP90JDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT40GP90JDQ2
UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 92°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
30
39
Amps
210
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 30A
I_F = 60A
I_F = 30A, T_J = 125°C
2.3
2.8
Volts
1.7
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
25
ns
t_rr
Reverse Recovery Time
-
240
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -200A/µs
V_R = 667V, T_C = 25°C
-
355
nC
-
4
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -200A/µs
V_R = 667V, T_C = 125°C
-
305
ns
-
1575
nC
-
9
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
135
I_F = 30A, di_F/dt = -1000A/µs
V_R = 667V, T_C = 125°C
-
2270
-
27
ns
nC
Amps
1.20
1.00
D = 0.9
0.80
0.7
0.60
0.5
Note:
0.40
0.3
t1
t2
0.20
0.1
Duty Factor D = ^t1/t2
0.05
0
SINGLE PULSE
Peak T_J = P_DM x Z_θJC + TC
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction
temp. (°C)
RC MODEL
0.291
0.00306
Power
(watts)
0.461
0.0463
Case temperature. (°C)
0.341
0.267
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL